N-channel transistor, 0.6A, 0.96A, 250uA, 1.5 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V - IRFL210

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Quantity	excl. VAT	VAT incl.
1 - 4	0.87$	0.87$
5 - 9	0.82$	0.82$
10 - 24	0.78$	0.78$
25 - 49	0.74$	0.74$
50 - 57	0.72$	0.72$

Quantity	U.P
1 - 4	0.87$	0.87$
5 - 9	0.82$	0.82$
10 - 24	0.78$	0.78$
25 - 49	0.74$	0.74$
50 - 57	0.72$	0.72$

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Quantity in stock : 57

Set of 1

N-channel transistor, 0.6A, 0.96A, 250uA, 1.5 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V - IRFL210. N-channel transistor, 0.6A, 0.96A, 250uA, 1.5 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V. ID (T=100°C): 0.6A. ID (T=25°C): 0.96A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 200V. C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Id(imp): 7.7A. IDss (min): 25uA. Note: screen printing/SMD code FC. Marking on the case: FC. Number of terminals: 4. Pd (Power Dissipation, Max): 3.1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 14 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 20/04/2025, 19:25.

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