N-channel transistor, 2.3A, 2.8A, 250uA, 0.075 Ohms, SOT-223 ( TO-226 ), SOT-223, 55V - IRFL024N

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Quantity	excl. VAT	VAT incl.
1 - 4	0.83$	0.83$
5 - 9	0.79$	0.79$
10 - 24	0.75$	0.75$
25 - 49	0.71$	0.71$
50 - 99	0.69$	0.69$
100 - 181	0.62$	0.62$

Quantity	U.P
1 - 4	0.83$	0.83$
5 - 9	0.79$	0.79$
10 - 24	0.75$	0.75$
25 - 49	0.71$	0.71$
50 - 99	0.69$	0.69$
100 - 181	0.62$	0.62$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 181

Set of 1

N-channel transistor, 2.3A, 2.8A, 250uA, 0.075 Ohms, SOT-223 ( TO-226 ), SOT-223, 55V - IRFL024N. N-channel transistor, 2.3A, 2.8A, 250uA, 0.075 Ohms, SOT-223 ( TO-226 ), SOT-223, 55V. ID (T=100°C): 2.3A. ID (T=25°C): 2.8A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 55V. C(in): 400pF. Cost): 145pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 35 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 11.2A. IDss (min): 25uA. Equivalents: IRFL024NPBF. Number of terminals: 3. Pd (Power Dissipation, Max): 2.1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 22.2 ns. Td(on): 8.1 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 19:25.

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