N-channel transistor IRFIBC20G, 1.1A, 1.7A, 500uA, 4.4 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 1.1A. ID (T=25°C): 1.7A. Idss (max): 500uA. On-resistance Rds On: 4.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 350pF. Channel type: N. Cost): 48pF. Drain-source protection: zener diode. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 100uA. Id(imp): 6A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 30W. Quantity per case: 1. RoHS: yes. Td(off): 30 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 290ms. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14