N-channel transistor IRFIBC30G, 1.5A, 2.5A, 500uA, 2.2 Ohms, TO-220FP, TO-220F, 600V

N-channel transistor IRFIBC30G, 1.5A, 2.5A, 500uA, 2.2 Ohms, TO-220FP, TO-220F, 600V

Quantity
Unit price
1-4
2.34$
5-24
2.03$
25-49
1.73$
50+
1.57$
Quantity in stock: 10

N-channel transistor IRFIBC30G, 1.5A, 2.5A, 500uA, 2.2 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 1.5A. ID (T=25°C): 2.5A. Idss (max): 500uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 660pF. Channel type: N. Cost): 86pF. Drain-source protection: zener diode. Function: Switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 100uA. Id(imp): 10A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 35W. Quantity per case: 1. RoHS: yes. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
IRFIBC30G
29 parameters
ID (T=100°C)
1.5A
ID (T=25°C)
2.5A
Idss (max)
500uA
On-resistance Rds On
2.2 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
660pF
Channel type
N
Cost)
86pF
Drain-source protection
zener diode
Function
Switching
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
100uA
Id(imp)
10A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
35W
Quantity per case
1
RoHS
yes
Td(off)
35 ns
Td(on)
11 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
400 ns
Type of transistor
MOSFET
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier