N-channel transistor, 2A, 3.1A, 500uA, 5 Ohms, TO-220, TO-220AB, 1000V - IRFBG30

Quantity	excl. VAT	VAT incl.
1 - 4	2.27$	2.27$
5 - 9	2.16$	2.16$
10 - 24	2.05$	2.05$
25 - 49	1.93$	1.93$
50 - 99	1.89$	1.89$
100 - 161	1.70$	1.70$

Quantity	U.P
1 - 4	2.27$	2.27$
5 - 9	2.16$	2.16$
10 - 24	2.05$	2.05$
25 - 49	1.93$	1.93$
50 - 99	1.89$	1.89$
100 - 161	1.70$	1.70$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 161

Set of 1

N-channel transistor, 2A, 3.1A, 500uA, 5 Ohms, TO-220, TO-220AB, 1000V - IRFBG30. N-channel transistor, 2A, 3.1A, 500uA, 5 Ohms, TO-220, TO-220AB, 1000V. ID (T=100°C): 2A. ID (T=25°C): 3.1A. Idss (max): 500uA. On-resistance Rds On: 5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 1000V. C(in): 980pF. Cost): 140pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 410 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 12A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 89 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 20/04/2025, 19:25.

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