N-channel transistor, 2.3A, 3.6A, 500uA, 2.2 Ohms, TO-220, TO-220AB, 600V - IRFBC30

Quantity	excl. VAT	VAT incl.
1 - 4	1.53$	1.53$
5 - 9	1.45$	1.45$
10 - 24	1.38$	1.38$
25 - 49	1.30$	1.30$
50 - 99	1.27$	1.27$
100 - 102	1.12$	1.12$

Quantity	U.P
1 - 4	1.53$	1.53$
5 - 9	1.45$	1.45$
10 - 24	1.38$	1.38$
25 - 49	1.30$	1.30$
50 - 99	1.27$	1.27$
100 - 102	1.12$	1.12$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 102

Set of 1

N-channel transistor, 2.3A, 3.6A, 500uA, 2.2 Ohms, TO-220, TO-220AB, 600V - IRFBC30. N-channel transistor, 2.3A, 3.6A, 500uA, 2.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 500uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 660pF. Cost): 86pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 14A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 19:25.

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