Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 5.69$ | 5.69$ |
2 - 2 | 5.41$ | 5.41$ |
3 - 4 | 5.12$ | 5.12$ |
5 - 9 | 4.84$ | 4.84$ |
10 - 19 | 4.72$ | 4.72$ |
20 - 29 | 4.61$ | 4.61$ |
30 - 40 | 4.44$ | 4.44$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 5.69$ | 5.69$ |
2 - 2 | 5.41$ | 5.41$ |
3 - 4 | 5.12$ | 5.12$ |
5 - 9 | 4.84$ | 4.84$ |
10 - 19 | 4.72$ | 4.72$ |
20 - 29 | 4.61$ | 4.61$ |
30 - 40 | 4.44$ | 4.44$ |
N-channel transistor, 59A, 83A, 1mA, 12m Ohms, TO-220, TO-220AB, 150V - IRFB4228. N-channel transistor, 59A, 83A, 1mA, 12m Ohms, TO-220, TO-220AB, 150V. ID (T=100°C): 59A. ID (T=25°C): 83A. Idss (max): 1mA. On-resistance Rds On: 12m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 150V. C(in): 4530pF. Cost): 550pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 76 ns. Type of transistor: MOSFET. Function: PDP Switch. Id(imp): 330A. IDss (min): 20uA. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 24 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -40...+175°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 20/04/2025, 15:25.
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