N-channel transistor IRF830APBF, 3.2A, 5A, 250uA, 1.4 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 3.2A. ID (T=25°C): 5A. Idss (max): 250uA. On-resistance Rds On: 1.4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 620 ns. Channel type: N. Cost): 93 ns. Function: Switching Mode Power Supplies (SMPS). Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 20A. Pd (Power Dissipation, Max): 74W. Quantity per case: 1. Td(off): 21 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Temperature: +105°C. Trr Diode (Min.): 430 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 11/06/2025, 22:14