N-channel transistor IRF710, 1.2A, 2A, 250uA, 3.6 Ohms, TO-220, TO-220AB, 400V. ID (T=100°C): 1.2A. ID (T=25°C): 2A. Idss (max): 250uA. On-resistance Rds On: 3.6 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 170pF. Channel type: N. Cost): 34pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 6A. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 36W. Quantity per case: 1. RoHS: yes. Td(off): 12 ns. Td(on): 8 ns. Technology: Power MOSFET. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 11/06/2025, 22:14