N-channel transistor IRF730, TO-220, 400V, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220AB, 400V. Housing: TO-220. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 400V. ID (T=100°C): 3.3A. ID (T=25°C): 5.5A. Idss (max): 250uA. On-resistance Rds On: 1 Ohm. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. Assembly/installation: PCB through-hole mounting. C(in): 700pF. Channel type: N. Charge: 38nC. Ciss Gate Capacitance [pF]: 530pF. Component family: MOSFET, N-MOS. Conditioning: tubus. Configuration: PCB through-hole mounting. Cost): 170pF. Drain current Id (A) @ 25°C: 5.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1 Ohms @ 5.5A. Drain current: 3.5A, 5.5A. Drain-source protection: zener diode. Drain-source voltage: 400V. Function: High-speed switching. G-S Protection: no. Gate breakdown voltage Ugs [V]: 4 v. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 22A. Manufacturer's marking: IRF730. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 74W. Number of terminals: 3. Number of terminals: 3. On-state resistance: 1 Ohm. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 75W. Polarity: unipolar. Power: 74W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 15 ns. Switch-on time ton [nsec.]: 11 ns. Td(off): 38 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14