N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 200V, 18A - IRF640NSTRLPBF
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 6.29$ | 6.29$ |
| 2 - 2 | 5.98$ | 5.98$ |
| 3 - 4 | 5.66$ | 5.66$ |
| 5 - 9 | 5.35$ | 5.35$ |
| 10 - 19 | 5.22$ | 5.22$ |
| 20 - 29 | 5.10$ | 5.10$ |
| 30 - 340 | 4.91$ | 4.91$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 6.29$ | 6.29$ |
| 2 - 2 | 5.98$ | 5.98$ |
| 3 - 4 | 5.66$ | 5.66$ |
| 5 - 9 | 5.35$ | 5.35$ |
| 10 - 19 | 5.22$ | 5.22$ |
| 20 - 29 | 5.10$ | 5.10$ |
| 30 - 340 | 4.91$ | 4.91$ |
N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 200V, 18A - IRF640NSTRLPBF. N-channel transistor, PCB soldering (SMD), D²-PAK, TO-263, 200V, 18A. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 18A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F640NS. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.15 Ohms @ 11A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 1160pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Quantity in stock updated on 20/04/2025, 11:25.
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