N-channel transistor IRF640N, TO-220, 13A, 18A, 250uA, 0.15 Ohms, TO-220AB, 200V. Housing: TO-220. ID (T=100°C): 13A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 0.15 Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 1160pF. Channel type: N. Charge: 44.7nC. Conditioning: tubus. Cost): 185pF. Drain current: 18A. Drain-source protection: yes. Drain-source voltage: 200V. Function: -. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 1K/W. IDss (min): 25uA. Id(imp): 72A. Manufacturer's marking: IRF640NPBF. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 150W. Polarity: unipolar. Power: 150W. Quantity per case: 1. RoHS: yes. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 167 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27