N-channel transistor IRF640, 11A, 18A, 250uA, 0.18 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 11A. ID (T=25°C): 18A. Idss (max): 250uA. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 1300pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 430pF. Drain-source protection: zener diode. Function: -. G-S Protection: no. Gate/emitter voltage VGE(th)max.: 4 v. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 72A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 125W. Quantity per case: 1. RoHS: yes. Td(off): 45 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 09:27