N-channel transistor IRF620, 3.3A, 5.2A, 250uA, 0.8 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss (max): 250uA. On-resistance Rds On: 0.8 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 260pF. Channel type: N. Cost): 100pF. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 18A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Td(off): 19 ns. Td(on): 7.2 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14