N-channel transistor IRF630, TO-220, 200V, 5.7A, 9A, 50uA, 0.35 Ohms, TO-220, 200V. Housing: TO-220. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 200V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 50uA. On-resistance Rds On: 0.35 Ohms. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 540pF. Channel type: N. Charge: 23.3nC. Ciss Gate Capacitance [pF]: 540pF. Component family: MOSFET, N-MOS. Conditioning unit: 50. Conditioning: tubus. Configuration: PCB through-hole mounting. Cost): 90pF. Drain current Id (A) @ 25°C: 9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.35 Ohms @ 4.5A. Drain current: 9.5A. Drain-source protection: yes. Drain-source voltage: 200V. Function: High Current Switching. G-S Protection: no. Gate breakdown voltage Ugs [V]: 4 v. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 1.83K/W. IDss (min): 1uA. Id(imp): 36A. Manufacturer's marking: IRF630. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 75W. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. Polarity: unipolar. Power: 82W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 15 ns. Switch-on time ton [nsec.]: 10 ns. Td(off): 12 ns. Td(on): 10 ns. Technology: MESH OVERLAY MOSFET. Temperature: +150°C. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/06/2025, 22:14