N-channel transistor IRF610, TO-220, 2.1A, 3.3A, 250uA, 1.5 Ohms, TO-220AB, 200V. Housing: TO-220. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 140pF. Channel type: N. Charge: 8.2nC. Conditioning: tubus. Cost): 53pF. Drain current: 3.3A, 2.1A. Drain-source protection: diode. Drain-source voltage: 200V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 10A. Number of terminals: 3. On-state resistance: 1.5 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 36W. Polarity: unipolar. Power: 36W. Quantity per case: 1. RoHS: yes. Td(off): 14 ns. Td(on): 8.2 ns. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 11/06/2025, 22:14