Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.55$ | 1.55$ |
5 - 9 | 1.47$ | 1.47$ |
10 - 24 | 1.39$ | 1.39$ |
25 - 49 | 1.31$ | 1.31$ |
50 - 99 | 1.28$ | 1.28$ |
100 - 249 | 1.15$ | 1.15$ |
250 - 395 | 1.10$ | 1.10$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.55$ | 1.55$ |
5 - 9 | 1.47$ | 1.47$ |
10 - 24 | 1.39$ | 1.39$ |
25 - 49 | 1.31$ | 1.31$ |
50 - 99 | 1.28$ | 1.28$ |
100 - 249 | 1.15$ | 1.15$ |
250 - 395 | 1.10$ | 1.10$ |
N-channel transistor, 25A, 36A, 250uA, TO-220, TO-220AB, 100V, 21 milliOhms - IRF540Z. N-channel transistor, 25A, 36A, 250uA, TO-220, TO-220AB, 100V, 21 milliOhms. ID (T=100°C): 25A. ID (T=25°C): 36A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. On-resistance Rds On: 21 milliOhms. C(in): 1770pF. Cost): 180pF. Channel type: N. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Id(imp): 140A. IDss (min): 25uA. Pd (Power Dissipation, Max): 92W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Ultra Low On-Resistance, <0.021 Ohms. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 05:25.
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