N-channel transistor IRF540, 20A, 28A, 250uA, 0.077 Ohms, TO-220, TO-220AB, 100V

N-channel transistor IRF540, 20A, 28A, 250uA, 0.077 Ohms, TO-220, TO-220AB, 100V

Quantity
Unit price
1-4
1.49$
5-49
1.27$
50-99
1.12$
100-199
1.03$
200+
0.89$
Equivalence available
Quantity in stock: 44

N-channel transistor IRF540, 20A, 28A, 250uA, 0.077 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 20A. ID (T=25°C): 28A. Idss (max): 250uA. On-resistance Rds On: 0.077 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 1700pF. Channel type: N. Cost): 560pF. Drain-source protection: yes. Function: 1.3k Ohms. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 110A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. RoHS: yes. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF540
30 parameters
ID (T=100°C)
20A
ID (T=25°C)
28A
Idss (max)
250uA
On-resistance Rds On
0.077 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
100V
Assembly/installation
PCB through-hole mounting
C(in)
1700pF
Channel type
N
Cost)
560pF
Drain-source protection
yes
Function
1.3k Ohms
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
25uA
Id(imp)
110A
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
150W
Quantity per case
1
RoHS
yes
Td(off)
53 ns
Td(on)
11 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
180 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier

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