N-channel transistor IRF540N, TO-220, 23A, 33A, 250uA, 0.044 Ohms, TO-220AB, 100V. Housing: TO-220. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.044 Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 1960pF. Channel type: N. Charge: 47.3nC. Conditioning: tubus. Cost): 250pF. Drain current: 33A. Drain-source protection: yes. Drain-source voltage: 100V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 1.1K/W. IDss (min): 25uA. Id(imp): 110A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 130W. Polarity: unipolar. Power: 140W. Quantity per case: 1. RoHS: yes. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27