N-channel transistor IRF530N, 12A, 17A, 250uA, 0.09 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.09 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 920pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 130pF. Drain-source protection: zener diode. Function: N MOSFET transistor. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 60A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 70W. Quantity per case: 1. RoHS: yes. Spec info: Dynamic dv/dt Rating. Td(off): 35 ns. Td(on): 9.2 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 93 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27