N-channel transistor, 110A, 150A, 250uA, 0.0037 Ohms, TO-220, TO-220AB, 55V - IRF1405ZPBF
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 2.78$ | 2.78$ |
| 5 - 9 | 2.64$ | 2.64$ |
| 10 - 24 | 2.50$ | 2.50$ |
| 25 - 49 | 2.36$ | 2.36$ |
| 50 - 66 | 2.30$ | 2.30$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 2.78$ | 2.78$ |
| 5 - 9 | 2.64$ | 2.64$ |
| 10 - 24 | 2.50$ | 2.50$ |
| 25 - 49 | 2.36$ | 2.36$ |
| 50 - 66 | 2.30$ | 2.30$ |
N-channel transistor, 110A, 150A, 250uA, 0.0037 Ohms, TO-220, TO-220AB, 55V - IRF1405ZPBF. N-channel transistor, 110A, 150A, 250uA, 0.0037 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 110A. ID (T=25°C): 150A. Idss (max): 250uA. On-resistance Rds On: 0.0037 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 4780pF. Cost): 770pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 600A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Rds-on 0.0037 Ohms max. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 02:25.
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