Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.60$ | 3.60$ |
5 - 9 | 3.42$ | 3.42$ |
10 - 24 | 3.24$ | 3.24$ |
25 - 49 | 3.06$ | 3.06$ |
50 - 99 | 2.99$ | 2.99$ |
100 - 173 | 2.76$ | 2.76$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.60$ | 3.60$ |
5 - 9 | 3.42$ | 3.42$ |
10 - 24 | 3.24$ | 3.24$ |
25 - 49 | 3.06$ | 3.06$ |
50 - 99 | 2.99$ | 2.99$ |
100 - 173 | 2.76$ | 2.76$ |
N-channel transistor, 130A, 190A, 250uA, 2.7M Ohms, TO-220, TO-220AB, 40V - IRF1404Z. N-channel transistor, 130A, 190A, 250uA, 2.7M Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 130A. ID (T=25°C): 190A. Idss (max): 250uA. On-resistance Rds On: 2.7M Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 4340pF. Cost): 1030pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 750A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 220W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 01:25.
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