N-channel transistor IRF1010N, TO-220, 60A, 85A, 250uA, 0.11 Ohms, TO-220AB, 55V. Housing: TO-220. ID (T=100°C): 60A. ID (T=25°C): 85A. Idss (max): 250uA. On-resistance Rds On: 0.11 Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 3210pF. Channel type: N. Charge: 80nC. Conditioning: tubus. Cost): 690pF. Drain current: 72A. Drain-source protection: yes. Drain-source voltage: 55V. Function: N MOSFET transistor. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/emitter voltage VGE(th) min.: 2V. Housing thermal resistance: 1.2K/W. IDss (min): 25uA. Id(imp): 290A. Pd (Power Dissipation, Max): 180W. Polarity: unipolar. Power: 130W. Quantity per case: 1. RoHS: yes. Td(off): 39 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Used for: -55...+175°C. Vgs(th) max.: 4 v. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:03