N-channel transistor IRF1010E, 59A, 83A, 250uA, 0.12 Ohms, TO-220, TO-220AB, 60V. ID (T=100°C): 59A. ID (T=25°C): 83A. Idss (max): 250uA. On-resistance Rds On: 0.12 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 2800pF. Channel type: N. Cost): 880pF. Drain-source protection: yes. Function: Fast Switching, Ultra Low On-Resistance. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 330A. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. RoHS: yes. Td(off): 41 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:03