N-channel transistor, 80A, 80A, 100uA, 6.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V - IPI80N06S2-08

Quantity	excl. VAT	VAT incl.
1 - 4	2.89$	2.89$
5 - 9	2.75$	2.75$
10 - 24	2.60$	2.60$
25 - 49	2.46$	2.46$
50 - 99	2.40$	2.40$
100 - 249	2.34$	2.34$
250 - 476	2.23$	2.23$

Quantity	U.P
1 - 4	2.89$	2.89$
5 - 9	2.75$	2.75$
10 - 24	2.60$	2.60$
25 - 49	2.46$	2.46$
50 - 99	2.40$	2.40$
100 - 249	2.34$	2.34$
250 - 476	2.23$	2.23$

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Quantity in stock : 476

Set of 1

N-channel transistor, 80A, 80A, 100uA, 6.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V - IPI80N06S2-08. N-channel transistor, 80A, 80A, 100uA, 6.5m Ohms, TO-262 ( I2-PAK ), TO-262, 55V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. On-resistance Rds On: 6.5m Ohms. Housing: TO-262 ( I2-PAK ). Housing (according to data sheet): TO-262. Voltage Vds(max): 55V. C(in): 2860pF. Cost): 740pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. Id(imp): 320A. IDss (min): 0.01uA. Marking on the case: 2N0608. Number of terminals: 3. Pd (Power Dissipation, Max): 215W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 14 ns. Technology: MOSFET transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Spec info: Ultra Low On-Resistance. G-S Protection: no. Quantity in stock updated on 20/04/2025, 02:25.

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