Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.40$ | 2.40$ |
5 - 9 | 2.28$ | 2.28$ |
10 - 24 | 2.16$ | 2.16$ |
25 - 35 | 2.04$ | 2.04$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.40$ | 2.40$ |
5 - 9 | 2.28$ | 2.28$ |
10 - 24 | 2.16$ | 2.16$ |
25 - 35 | 2.04$ | 2.04$ |
N-channel transistor, 50A, 50A, 27uA, 7.6m Ohms, D-PAK ( TO-252 ), PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ), 30 v - IPD50N03S2L-06. N-channel transistor, 50A, 50A, 27uA, 7.6m Ohms, D-PAK ( TO-252 ), PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 50A. ID (T=25°C): 50A. Idss (max): 27uA. On-resistance Rds On: 7.6m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 1900pF. Cost): 760pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Function: Logic Level, Enhancement mode. Id(imp): 200A. IDss (min): 0.01uA. Marking on the case: PN03L06. Number of terminals: 2. Pd (Power Dissipation, Max): 136W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 10 ns. Technology: OptiMOS® Power-Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 02:25.
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