N-channel transistor, 80A, 80A, 100uA, 6.5m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V - IPB80N06S2-08

Quantity	excl. VAT	VAT incl.
1 - 4	2.56$	2.56$
5 - 9	2.43$	2.43$
10 - 24	2.30$	2.30$
25 - 49	2.17$	2.17$
50 - 99	2.12$	2.12$
100 - 218	2.07$	2.07$

Quantity	U.P
1 - 4	2.56$	2.56$
5 - 9	2.43$	2.43$
10 - 24	2.30$	2.30$
25 - 49	2.17$	2.17$
50 - 99	2.12$	2.12$
100 - 218	2.07$	2.07$

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Quantity in stock : 218

Set of 1

N-channel transistor, 80A, 80A, 100uA, 6.5m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V - IPB80N06S2-08. N-channel transistor, 80A, 80A, 100uA, 6.5m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 100uA. On-resistance Rds On: 6.5m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 2860pF. Cost): 740pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: Automotive AEC Q101 qualified. Id(imp): 320A. IDss (min): 0.01uA. Marking on the case: 2N0608. Number of terminals: 2. Pd (Power Dissipation, Max): 215W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 14 ns. Technology: MOSFET transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Spec info: Ultra Low On-Resistance. G-S Protection: no. Quantity in stock updated on 20/04/2025, 02:25.

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