N-channel transistor, 2.1M Ohms, D2PAK ( TO-263 ), TO263-7 - IPB014N06NATMA1
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 5.40$ | 5.40$ |
| 5 - 9 | 5.13$ | 5.13$ |
| 10 - 24 | 4.97$ | 4.97$ |
| 25 - 44 | 4.75$ | 4.75$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 5.40$ | 5.40$ |
| 5 - 9 | 5.13$ | 5.13$ |
| 10 - 24 | 4.97$ | 4.97$ |
| 25 - 44 | 4.75$ | 4.75$ |
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N-channel transistor, 2.1M Ohms, D2PAK ( TO-263 ), TO263-7 - IPB014N06NATMA1. N-channel transistor, 2.1M Ohms, D2PAK ( TO-263 ), TO263-7. On-resistance Rds On: 2.1M Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO263-7. Channel type: N. Conditioning: roll. Quantity per case: 1. Type of transistor: MOSFET. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: OptiMOS Power. Operating temperature: -55...+175°C. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 08/06/2025, 05:25.
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