Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 13.41$ | 13.41$ |
2 - 2 | 12.74$ | 12.74$ |
3 - 4 | 12.07$ | 12.07$ |
5 - 9 | 11.40$ | 11.40$ |
10 - 14 | 11.13$ | 11.13$ |
15 - 19 | 10.87$ | 10.87$ |
20 - 65 | 10.46$ | 10.46$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 13.41$ | 13.41$ |
2 - 2 | 12.74$ | 12.74$ |
3 - 4 | 12.07$ | 12.07$ |
5 - 9 | 11.40$ | 11.40$ |
10 - 14 | 11.13$ | 11.13$ |
15 - 19 | 10.87$ | 10.87$ |
20 - 65 | 10.46$ | 10.46$ |
N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V - IKW75N60T. N-channel transistor, 75A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 75A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. C(in): 4620pF. Cost): 288pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 182 ns. Function: Very low VCEsat. Collector current: 80A. Ic(pulse): 225A. Marking on the case: K75T60. Number of terminals: 3. Pd (Power Dissipation, Max): 428W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 330 ns. Td(on): 33 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.5V. Maximum saturation voltage VCE(sat): 1.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.1V. Gate/emitter voltage VGE(th)max.: 5.7V. Spec info: 'Trench and Fieldstop' technology IGBT transistor. CE diode: yes. Germanium diode: no. Quantity in stock updated on 20/04/2025, 01:25.
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