N-channel transistor, 30A, TO-247, PG-TO247-3, 1350V - IHW30N135R5XKSA1
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 8.23$ | 8.23$ |
| 2 - 2 | 7.81$ | 7.81$ |
| 3 - 4 | 7.40$ | 7.40$ |
| 5 - 9 | 6.99$ | 6.99$ |
| 10 - 19 | 6.83$ | 6.83$ |
| 20 - 29 | 6.66$ | 6.66$ |
| 30 - 44 | 6.42$ | 6.42$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 8.23$ | 8.23$ |
| 2 - 2 | 7.81$ | 7.81$ |
| 3 - 4 | 7.40$ | 7.40$ |
| 5 - 9 | 6.99$ | 6.99$ |
| 10 - 19 | 6.83$ | 6.83$ |
| 20 - 29 | 6.66$ | 6.66$ |
| 30 - 44 | 6.42$ | 6.42$ |
N-channel transistor, 30A, TO-247, PG-TO247-3, 1350V - IHW30N135R5XKSA1. N-channel transistor, 30A, TO-247, PG-TO247-3, 1350V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Collector/emitter voltage Vceo: 1350V. C(in): 1810pF. Cost): 50pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Collector current: 60A. Ic(pulse): 90A. Marking on the case: H30PR5. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 310 ns. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 1.95V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Function: Inductive Cooking, Microwave Ovens. Spec info: Reverse conducting IGBT with monolithic body diode. CE diode: yes. Germanium diode: no. Quantity in stock updated on 20/04/2025, 02:25.
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