N-channel transistor, 20A, TO-247, PG-TO247-3, 1350V - IHW20N135R5

Quantity	excl. VAT	VAT incl.
1 - 1	6.94$	6.94$
2 - 2	6.60$	6.60$
3 - 4	6.25$	6.25$
5 - 9	5.90$	5.90$
10 - 19	5.76$	5.76$
20 - 29	5.62$	5.62$
30 - 41	5.42$	5.42$

Quantity	U.P
1 - 1	6.94$	6.94$
2 - 2	6.60$	6.60$
3 - 4	6.25$	6.25$
5 - 9	5.90$	5.90$
10 - 19	5.76$	5.76$
20 - 29	5.62$	5.62$
30 - 41	5.42$	5.42$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 41

Set of 1

N-channel transistor, 20A, TO-247, PG-TO247-3, 1350V - IHW20N135R5. N-channel transistor, 20A, TO-247, PG-TO247-3, 1350V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Collector/emitter voltage Vceo: 1350V. C(in): 1360pF. Cost): 43pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 50 ns. Function: Reverse conducting IGBT with monolithic body diode. Collector current: 40A. Ic(pulse): 60A. Marking on the case: H20PR5. Number of terminals: 3. Pd (Power Dissipation, Max): 288W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 235 ns. Technology: TRENCHSTOP TM technology. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 1.85V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Spec info: Ic 40A @ 25°C, 20A @ 110°C, Icm 60A (pulsed). CE diode: yes. Germanium diode: no. Quantity in stock updated on 20/04/2025, 02:25.