N-channel transistor, 20A, TO-247, PG-TO247-3, 1200V - IHW20N120R5

N-channel transistor, 20A, TO-247, PG-TO247-3, 1200V - IHW20N120R5. N-channel transistor, 20A, TO-247, PG-TO247-3, 1200V. Ic(T=100°C): 20A. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Collector/emitter voltage Vceo: 1200V. C(in): 1340pF. Cost): 43pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 90 ns. Function: Powerful monolithic body diode with low forward voltage. Germanium diode: no. Collector current: 40A. Ic(pulse): 60A. Marking on the case: H20MR5. Number of terminals: 3. Pd (Power Dissipation, Max): 288W. RoHS: yes. Spec info: Ic 40A @ 25°C, 20A @ 110°C, Icm 60A (pulsed). Assembly/installation: PCB through-hole mounting. Td(off): 350 ns. Td(on): 260 ns. Technology: TRENCHSTOP TM technology. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.55V. Maximum saturation voltage VCE(sat): 1.75V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 08/06/2025, 02:25.