N-channel transistor FQPF8N60C, TO-220FP, 600V, 4.6A, 7.5A, 10uA, 1 Ohm, TO-220F, 600V

N-channel transistor FQPF8N60C, TO-220FP, 600V, 4.6A, 7.5A, 10uA, 1 Ohm, TO-220F, 600V

Quantity
Unit price
1-4
2.12$
5-24
1.83$
25-49
1.64$
50-99
1.48$
100+
1.22$
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Equivalence available

N-channel transistor FQPF8N60C, TO-220FP, 600V, 4.6A, 7.5A, 10uA, 1 Ohm, TO-220F, 600V. Housing: TO-220FP. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 600V. ID (T=100°C): 4.6A. ID (T=25°C): 7.5A. Idss (max): 10uA. On-resistance Rds On: 1 Ohm. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 965pF. Channel type: N. Ciss Gate Capacitance [pF]: 1255pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 105pF. Drain current Id (A) @ 25°C: 7.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ 3.75A. Drain-source protection: diode. Function: Fast switch, Low gate charge 28nC, Low Crss 12pF. G-S Protection: no. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 30A. Manufacturer's marking: FQPF8N60C. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 48W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 48W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 170 ns. Switch-on time ton [nsec.]: 45 ns. Td(off): 81 ns. Td(on): 16.5 ns. Technology: DMOS, QFET. Trr Diode (Min.): 365ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 06:37

Technical documentation (PDF)
FQPF8N60C
42 parameters
Housing
TO-220FP
Drain-source voltage Uds [V]
600V
ID (T=100°C)
4.6A
ID (T=25°C)
7.5A
Idss (max)
10uA
On-resistance Rds On
1 Ohm
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
965pF
Channel type
N
Ciss Gate Capacitance [pF]
1255pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Cost)
105pF
Drain current Id (A) @ 25°C
7.6A
Drain current through resistor Rds [Ohm] @ Ids [A]
1.2 Ohms @ 3.75A
Drain-source protection
diode
Function
Fast switch, Low gate charge 28nC, Low Crss 12pF
G-S Protection
no
Gate breakdown voltage Ugs [V]
4 v
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
30A
Manufacturer's marking
FQPF8N60C
Max temperature
+150°C.
Maximum dissipation Ptot [W]
48W
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
48W
Quantity per case
1
RoHS
yes
Switch-off delay tf[nsec.]
170 ns
Switch-on time ton [nsec.]
45 ns
Td(off)
81 ns
Td(on)
16.5 ns
Technology
DMOS, QFET
Trr Diode (Min.)
365ns
Type of transistor
MOSFET
Vgs(th) min.
2V
Original product from manufacturer
Fairchild

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