N-channel transistor FQPF8N80C, 5.1A, 8A, 100uA, 1.29 Ohms, TO-220FP, TO-220F, 800V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. On-resistance Rds On: 1.29 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 955pF. Channel type: N. Cost): 100pF. Drain-source protection: diode. Function: Fast switch, Low gate charge 35nC, Low Crss 13pF. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 32A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 59W. Production date: 201432. Quantity per case: 1. RoHS: yes. Td(off): 65 ns. Td(on): 40 ns. Technology: DMOS, QFET. Trr Diode (Min.): 690 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 06:37