N-channel transistor FQPF19N20, 7.5A, 11.8A, 10uA, 0.12 Ohms, TO-220FP, TO-220F, 200V

N-channel transistor FQPF19N20, 7.5A, 11.8A, 10uA, 0.12 Ohms, TO-220FP, TO-220F, 200V

Quantity
Unit price
1-4
2.33$
5-24
2.00$
25-49
1.76$
50+
1.59$
Equivalence available
Quantity in stock: 19

N-channel transistor FQPF19N20, 7.5A, 11.8A, 10uA, 0.12 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 7.5A. ID (T=25°C): 11.8A. Idss (max): 10uA. On-resistance Rds On: 0.12 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 1220pF. Channel type: N. Cost): 220pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 48A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Td(off): 55 ns. Td(on): 20 ns. Technology: N-channel MOSFET transistor (DMOS, QFET). Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 06:37

Technical documentation (PDF)
FQPF19N20
30 parameters
ID (T=100°C)
7.5A
ID (T=25°C)
11.8A
Idss (max)
10uA
On-resistance Rds On
0.12 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
1220pF
Channel type
N
Cost)
220pF
Drain-source protection
yes
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
48A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
50W
Quantity per case
1
RoHS
yes
Td(off)
55 ns
Td(on)
20 ns
Technology
N-channel MOSFET transistor (DMOS, QFET)
Trr Diode (Min.)
140 ns
Type of transistor
MOSFET
Vgs(th) max.
5V
Vgs(th) min.
3V
Original product from manufacturer
Fairchild

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