N-channel transistor FQPF19N20C, 12.1A, 19A, 100uA, 0.14 Ohms, TO-220FP, TO-220F, 200V

N-channel transistor FQPF19N20C, 12.1A, 19A, 100uA, 0.14 Ohms, TO-220FP, TO-220F, 200V

Quantity
Unit price
1-4
2.40$
5-24
2.04$
25-49
1.80$
50-99
1.62$
100+
1.33$
Quantity in stock: 97

N-channel transistor FQPF19N20C, 12.1A, 19A, 100uA, 0.14 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 12.1A. ID (T=25°C): 19A. Idss (max): 100uA. On-resistance Rds On: 0.14 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 830pF. Channel type: N. Cost): 195pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage (off) min.: 2V. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 76A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 43W. Quantity per case: 1. RoHS: yes. Td(off): 135 ns. Td(on): 15 ns. Technology: N-channel MOSFET transistor (DMOS, QFET). Trr Diode (Min.): 208 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 06:37

Technical documentation (PDF)
FQPF19N20C
30 parameters
ID (T=100°C)
12.1A
ID (T=25°C)
19A
Idss (max)
100uA
On-resistance Rds On
0.14 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
200V
Assembly/installation
PCB through-hole mounting
C(in)
830pF
Channel type
N
Cost)
195pF
Drain-source protection
yes
Function
High-speed switching
G-S Protection
no
Gate/source voltage (off) min.
2V
Gate/source voltage Vgs
30 v
IDss (min)
10uA
Id(imp)
76A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
43W
Quantity per case
1
RoHS
yes
Td(off)
135 ns
Td(on)
15 ns
Technology
N-channel MOSFET transistor (DMOS, QFET)
Trr Diode (Min.)
208 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Original product from manufacturer
Fairchild