N-channel transistor FQP7N80C, 4.2A, 6.6A, 100uA, 1.57 Ohms, TO-220, TO-220, 800V

N-channel transistor FQP7N80C, 4.2A, 6.6A, 100uA, 1.57 Ohms, TO-220, TO-220, 800V

Quantity
Unit price
1-4
2.36$
5-24
2.06$
25-49
1.84$
50+
1.61$
Equivalence available
Quantity in stock: 63

N-channel transistor FQP7N80C, 4.2A, 6.6A, 100uA, 1.57 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. On-resistance Rds On: 1.57 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 1290pF. Channel type: N. Cost): 120pF. Drain-source protection: diode. Function: Fast switch, Low gate charge 27nC, Low Crss 10pF. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 26.4A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 167W. Quantity per case: 1. RoHS: yes. Td(off): 50 ns. Td(on): 35 ns. Technology: DMOS, QFET. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 06:37

Technical documentation (PDF)
FQP7N80C
29 parameters
ID (T=100°C)
4.2A
ID (T=25°C)
6.6A
Idss (max)
100uA
On-resistance Rds On
1.57 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220
Voltage Vds(max)
800V
Assembly/installation
PCB through-hole mounting
C(in)
1290pF
Channel type
N
Cost)
120pF
Drain-source protection
diode
Function
Fast switch, Low gate charge 27nC, Low Crss 10pF
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
10uA
Id(imp)
26.4A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
167W
Quantity per case
1
RoHS
yes
Td(off)
50 ns
Td(on)
35 ns
Technology
DMOS, QFET
Trr Diode (Min.)
650 ns
Type of transistor
MOSFET
Vgs(th) min.
3V
Original product from manufacturer
Fairchild

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