N-channel transistor FQP7N80, 4.2A, 6.6A, 100uA, 1.2 Ohms, TO-220, TO-220, 800V

N-channel transistor FQP7N80, 4.2A, 6.6A, 100uA, 1.2 Ohms, TO-220, TO-220, 800V

Quantity
Unit price
1-4
4.32$
5-24
4.03$
25-49
3.79$
50+
3.61$
Equivalence available
Quantity in stock: 104

N-channel transistor FQP7N80, 4.2A, 6.6A, 100uA, 1.2 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 1420pF. Channel type: N. Cost): 150pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 26.4A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 167W. Quantity per case: 1. RoHS: yes. Td(off): 95 ns. Td(on): 35 ns. Technology: DMOS, QFET. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 06:37

Technical documentation (PDF)
FQP7N80
30 parameters
ID (T=100°C)
4.2A
ID (T=25°C)
6.6A
Idss (max)
100uA
On-resistance Rds On
1.2 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220
Voltage Vds(max)
800V
Assembly/installation
PCB through-hole mounting
C(in)
1420pF
Channel type
N
Cost)
150pF
Drain-source protection
yes
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
10uA
Id(imp)
26.4A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
167W
Quantity per case
1
RoHS
yes
Td(off)
95 ns
Td(on)
35 ns
Technology
DMOS, QFET
Trr Diode (Min.)
400 ns
Type of transistor
MOSFET
Vgs(th) max.
5V
Vgs(th) min.
3V
Original product from manufacturer
Fairchild

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