N-channel transistor FQP5N60C, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220, TO-220, 600V

N-channel transistor FQP5N60C, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220, TO-220, 600V

Quantity
Unit price
1-4
2.38$
5-24
2.07$
25-49
1.82$
50-99
1.69$
100+
1.50$
Equivalence available
Quantity in stock: 34

N-channel transistor FQP5N60C, 2.6A, 4.5A, 10uA, 2 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.6A. ID (T=25°C): 4.5A. Idss (max): 10uA. On-resistance Rds On: 2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 515pF. Channel type: N. Cost): 55pF. Drain-source protection: yes. Function: Fast switch, Low gate charge 15nC, Low Crss 6.5pF. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 18A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 100W. Quantity per case: 1. RoHS: yes. Td(off): 38 ns. Td(on): 10 ns. Technology: 'enhancement mode power field effect transistor'. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 06:37

Technical documentation (PDF)
FQP5N60C
30 parameters
ID (T=100°C)
2.6A
ID (T=25°C)
4.5A
Idss (max)
10uA
On-resistance Rds On
2 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
515pF
Channel type
N
Cost)
55pF
Drain-source protection
yes
Function
Fast switch, Low gate charge 15nC, Low Crss 6.5pF
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
18A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
100W
Quantity per case
1
RoHS
yes
Td(off)
38 ns
Td(on)
10 ns
Technology
'enhancement mode power field effect transistor'
Trr Diode (Min.)
300 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Fairchild

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