N-channel transistor IRFBC40, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1300pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 160pF. Drain-source protection: zener diode. Function: Dynamic dv/dt Rating. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 100uA. Id(imp): 25A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 125W. Quantity per case: 1. RoHS: yes. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:34