N-channel transistor FQP13N50, 7.9A, 12.5A, 10uA, 0.33 Ohms, TO-220, TO-220AB, 500V
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Technical description of the product (FQP13N50):
N-channel transistor FQP13N50, 7.9A, 12.5A, 10uA, 0.33 Ohms, TO-220, TO-220AB, 500V. ID (T=100°C): 7.9A. ID (T=25°C): 12.5A. Idss (max): 10uA. On-resistance Rds On: 0.33 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 1800pF. Channel type: N. Cost): 245pF. Drain-source protection: yes. Function: Fast Switching Speed. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 50A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 170W. Quantity per case: 1. RoHS: yes. Td(off): 100 ns. Td(on): 40 ns. Technology: N-channel MOSFET transistor (DMOS, QFET). Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V