Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 76.40$ | 76.40$ |
2 - 2 | 72.58$ | 72.58$ |
3 - 4 | 71.05$ | 71.05$ |
5 - 9 | 69.52$ | 69.52$ |
10 - 14 | 68.76$ | 68.76$ |
15 - 19 | 68.00$ | 68.00$ |
20+ | 67.23$ | 67.23$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 76.40$ | 76.40$ |
2 - 2 | 72.58$ | 72.58$ |
3 - 4 | 71.05$ | 71.05$ |
5 - 9 | 69.52$ | 69.52$ |
10 - 14 | 68.76$ | 68.76$ |
15 - 19 | 68.00$ | 68.00$ |
20+ | 67.23$ | 67.23$ |
N-channel transistor, 25A, Other, Other, 1200V - FP25R12W2T4. N-channel transistor, 25A, Other, Other, 1200V. Ic(T=100°C): 25A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 1.45pF. CE diode: yes. Channel type: N. Function: ICRM--50A Tp=1mS, Tc=25°C. Germanium diode: no. Collector current: 39A. Ic(pulse): 50A. Note: 7x IGBT+ CE Diode. Number of terminals: 33dB. Dimensions: 56.7x48x12mm. Pd (Power Dissipation, Max): 175W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.46 ns. Td(on): 0.08 ns. Technology: IGBT Hybrid module. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.25V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.2V. Gate/emitter voltage VGE(th)max.: 6.4V. Original product from manufacturer Eupec/infineon. Quantity in stock updated on 07/06/2025, 23:25.
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