N-channel transistor, 50A, 65A, 1uA, 8.2M Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v - FDD6672A

Quantity	excl. VAT	VAT incl.
1 - 4	3.80$	3.80$
5 - 9	3.61$	3.61$
10 - 24	3.42$	3.42$
25 - 49	3.23$	3.23$
50 - 99	3.16$	3.16$
100 - 249	3.08$	3.08$
250 - 258	2.97$	2.97$

Quantity	U.P
1 - 4	3.80$	3.80$
5 - 9	3.61$	3.61$
10 - 24	3.42$	3.42$
25 - 49	3.23$	3.23$
50 - 99	3.16$	3.16$
100 - 249	3.08$	3.08$
250 - 258	2.97$	2.97$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 258

Set of 1

N-channel transistor, 50A, 65A, 1uA, 8.2M Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v - FDD6672A. N-channel transistor, 50A, 65A, 1uA, 8.2M Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=100°C): 50A. ID (T=25°C): 65A. Idss (max): 1uA. On-resistance Rds On: 8.2M Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. C(in): 5070pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: DC/DC voltage converter. Id(imp): 100A. Note: Logic level gated transistor. Number of terminals: 2. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 69 ns. Td(on): 17 ns. Technology: Power Trench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 12V. Vgs(th) max.: 2V. Vgs(th) min.: 0.8V. G-S Protection: no. Quantity in stock updated on 19/04/2025, 15:25.

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