Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.66$ | 3.66$ |
5 - 9 | 3.47$ | 3.47$ |
10 - 24 | 3.29$ | 3.29$ |
25 - 49 | 3.11$ | 3.11$ |
50 - 99 | 3.04$ | 3.04$ |
100 - 249 | 2.96$ | 2.96$ |
250 - 293 | 2.85$ | 2.85$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.66$ | 3.66$ |
5 - 9 | 3.47$ | 3.47$ |
10 - 24 | 3.29$ | 3.29$ |
25 - 49 | 3.11$ | 3.11$ |
50 - 99 | 3.04$ | 3.04$ |
100 - 249 | 2.96$ | 2.96$ |
250 - 293 | 2.85$ | 2.85$ |
N-channel transistor, 50A, 1uA, 0.0088 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v - FDD6296. N-channel transistor, 50A, 1uA, 0.0088 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=25°C): 50A. Idss (max): 1uA. On-resistance Rds On: 0.0088 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 25 ns. Type of transistor: MOSFET. Id(imp): 100A. Number of terminals: 2. Pd (Power Dissipation, Max): 52W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: PowerTrench MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. G-S Protection: no. Quantity in stock updated on 19/04/2025, 15:25.
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