N-channel transistor, 50A, 1uA, 0.0087 Ohms, D2PAK ( TO-263 ), TO-263AB, 40V - FDB8447L
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 3.51$ | 3.51$ |
| 5 - 9 | 3.34$ | 3.34$ |
| 10 - 24 | 3.23$ | 3.23$ |
| 25 - 49 | 3.16$ | 3.16$ |
| 50 - 58 | 3.09$ | 3.09$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 3.51$ | 3.51$ |
| 5 - 9 | 3.34$ | 3.34$ |
| 10 - 24 | 3.23$ | 3.23$ |
| 25 - 49 | 3.16$ | 3.16$ |
| 50 - 58 | 3.09$ | 3.09$ |
N-channel transistor, 50A, 1uA, 0.0087 Ohms, D2PAK ( TO-263 ), TO-263AB, 40V - FDB8447L. N-channel transistor, 50A, 1uA, 0.0087 Ohms, D2PAK ( TO-263 ), TO-263AB, 40V. ID (T=25°C): 50A. Idss (max): 1uA. On-resistance Rds On: 0.0087 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263AB. Voltage Vds(max): 40V. C(in): 1970pF. Cost): 250pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 100A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 11 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 07/06/2025, 17:25.
We also recommend :
We also recommend :
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.