N-channel transistor, 600A, Other, Other, 1200V - DF600R12IP4D

N-channel transistor, 600A, Other, Other, 1200V - DF600R12IP4D. N-channel transistor, 600A, Other, Other, 1200V. Ic(T=100°C): 600A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 37pF. CE diode: yes. Channel type: N. Function: VCE(sat) 1.7V (Ic=600A, VGE=15V, 25°C). Germanium diode: no. Collector current: 600A. Ic(pulse): 1200A. Number of terminals: 10. Dimensions: 172x89x37mm. Pd (Power Dissipation, Max): 3350W. RoHS: yes. Spec info: ICRM--Tp=1mS 1200A. Assembly/installation: PCB through-hole mounting. Td(off): 0.7 ns. Td(on): 0.21 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.8V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 07/06/2025, 17:25.