N-channel transistor BUZ11, TO-220, 50V, 0.03 Ohms, 50V, 19A, 30A, 100uA, TO-220AC, 50V

N-channel transistor BUZ11, TO-220, 50V, 0.03 Ohms, 50V, 19A, 30A, 100uA, TO-220AC, 50V

Quantity
Unit price
1-4
1.39$
5-24
1.17$
25-49
1.05$
50-99
0.96$
100+
0.86$
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Equivalence available
Quantity in stock: 52

N-channel transistor BUZ11, TO-220, 50V, 0.03 Ohms, 50V, 19A, 30A, 100uA, TO-220AC, 50V. Housing: TO-220. Drain-source voltage (Vds): 50V. On-resistance Rds On: 0.03 Ohms. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 50V. ID (T=100°C): 19A. ID (T=25°C): 30A. Idss (max): 100uA. Housing (according to data sheet): TO-220AC. Voltage Vds(max): 50V. Assembly/installation: PCB through-hole mounting. C(in): 1500pF. Channel type: N. Ciss Gate Capacitance [pF]: 1500pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 750pF. Drain current Id (A) @ 25°C: 30A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 15A. Drain-source protection: yes. G-S Protection: no. Gate breakdown voltage Ugs [V]: 4 v. Gate/source voltage Vgs: 20V. IDss (min): 20uA. Id(imp): 60.4k Ohms. Manufacturer's marking: BUZ11. Max drain current: 30A. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 75W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 75W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 180 ns. Switch-on time ton [nsec.]: 30 ns. Td(off): 180 ns. Td(on): 30 ns. Technology: Power MOSFET. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
BUZ11
44 parameters
Housing
TO-220
Drain-source voltage (Vds)
50V
On-resistance Rds On
0.03 Ohms
Drain-source voltage Uds [V]
50V
ID (T=100°C)
19A
ID (T=25°C)
30A
Idss (max)
100uA
Housing (according to data sheet)
TO-220AC
Voltage Vds(max)
50V
Assembly/installation
PCB through-hole mounting
C(in)
1500pF
Channel type
N
Ciss Gate Capacitance [pF]
1500pF
Component family
MOSFET, N-MOS
Configuration
PCB through-hole mounting
Cost)
750pF
Drain current Id (A) @ 25°C
30A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.04 Ohms @ 15A
Drain-source protection
yes
G-S Protection
no
Gate breakdown voltage Ugs [V]
4 v
Gate/source voltage Vgs
20V
IDss (min)
20uA
Id(imp)
60.4k Ohms
Manufacturer's marking
BUZ11
Max drain current
30A
Max temperature
+150°C.
Maximum dissipation Ptot [W]
75W
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
75W
Quantity per case
1
RoHS
yes
Switch-off delay tf[nsec.]
180 ns
Switch-on time ton [nsec.]
30 ns
Td(off)
180 ns
Td(on)
30 ns
Technology
Power MOSFET
Trr Diode (Min.)
200 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2.1V
Original product from manufacturer
Fairchild

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