N-channel transistor BUK455-600B, 2.5A, 4A, 20uA, 2.1 Ohms, TO-220, TO-220, 600V

N-channel transistor BUK455-600B, 2.5A, 4A, 20uA, 2.1 Ohms, TO-220, TO-220, 600V

Quantity
Unit price
1-4
4.42$
5-24
3.84$
25-49
3.41$
50+
3.31$
Equivalence available
Quantity in stock: 14

N-channel transistor BUK455-600B, 2.5A, 4A, 20uA, 2.1 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss (max): 20uA. On-resistance Rds On: 2.1 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 750pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 90pF. Drain-source protection: diode. Function: Power MOSFET SMPS. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 2uA. Id(imp): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. Quantity per case: 1. Td(off): 100 ns. Td(on): 10 ns. Temperature: +150°C. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Vgs(th) min.: 2.1V. Original product from manufacturer: Philips Semiconductors. Quantity in stock updated on 10/31/2025, 09:25

Technical documentation (PDF)
BUK455-600B
29 parameters
ID (T=100°C)
2.5A
ID (T=25°C)
4A
Idss (max)
20uA
On-resistance Rds On
2.1 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
750pF
Channel type
N
Conditioning unit
50
Conditioning
plastic tube
Cost)
90pF
Drain-source protection
diode
Function
Power MOSFET SMPS
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
2uA
Id(imp)
16A
Number of terminals
3
Pd (Power Dissipation, Max)
100W
Quantity per case
1
Td(off)
100 ns
Td(on)
10 ns
Temperature
+150°C
Trr Diode (Min.)
1200 ns
Type of transistor
MOSFET
Vgs(th) min.
2.1V
Original product from manufacturer
Philips Semiconductors

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