N-channel transistor 2SK1117, 6A, 300uA, 0.95 Ohms, TO-220, TO-220, 600V. ID (T=25°C): 6A. Idss (max): 300uA. On-resistance Rds On: 0.95 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1400pF. Channel type: N. Cost): 250pF. Drain-source protection: diode. Function: N MOSFET transistor. G-S Protection: no. Gate/source voltage Vgs: 20V. Id(imp): 24A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 100W. Quantity per case: 1. Td(off): 8.5 ns. Td(on): 4 ns. Technology: V-MOS. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31