N-channel transistor BSS123, SOT-23 ( TO-236 ), 100V, 150mA, 100uA, 3.5 Ohms, SOT-23 ( TO236 ), 100V. Housing: SOT-23 ( TO-236 ). Vdss (Drain to Source Voltage): 100V. ID (T=25°C): 150mA. Idss (max): 100uA. On-resistance Rds On: 3.5 Ohms. Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. Assembly/installation: surface-mounted component (SMD). C(in): 23pF. Channel type: N. Cost): 6pF. Drain current: 170mA. Drain-source protection: yes. Drain-source voltage: 100V. Drive Voltage: -. Equivalents: BSS123LT1G, BSS123-7-F. Features: -. Function: screen printing/SMD code SA. G-S Protection: no. Gate/source voltage (off) max.: 2.8V. Gate/source voltage Vgs max: ±20V. Gate/source voltage Vgs: 20V. IDss (min): 10uA. Id @ Tc=25°C (Continuous Drain Current): 150mA. Id(imp): 600mA. Information: -. MSL: 1. Manufacturer's marking: BSS123-7-F. Marking on the case: SA. Mounting Type: SMD. Number of terminals: 3. On-state resistance: 6 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.25W. Polarity: unipolar. Power: 360mW. Quantity per case: 1. Rds On (Max) @ Id, Vgs: 6 Ohms / 120mA / 10V. RoHS: yes. Series: -. Td(off): 12 ns. Td(on): 3 ns. Technology: N-channel TrenchMOS transistor Logic level FET. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Vgs(th) min.: 1V. Original product from manufacturer: Nxp Semiconductors. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 13:31